[5p-PA1-1~82] 17 Nanocarbon Technology（Poster）

[5p-PA1-70] Superconducting Transition of Thin Layered Superconductor NbSe₂: Influence of Device Structures

〇(M2)Daisuke Yabe¹, Katsuhide Yarimizu¹, Hiroki Sonoda¹, Hikari Tomori^1,2, Kenji Watanabe³, Takashi Taniguchi³, Akinobu Kanda¹ (1.Tsukuba Univ., 2.PRESTO-JST, 3.NIMS)

Keywords:NbSe2, Superconducting transition, Layered superconductor

Recently, by using the exfoliation technique developed for graphene, one can investigate the superconductivity of layered superconductors with atomic thicknesses. For layered superconductor NbSe₂, two groups have reported decrease of the superconducting transition temperature Tc with decreasing thickness, but the reported Tc values differ in these reports. Here, to investigate the origin of the Tc difference, we studied the influence of the device structures on the superconducting transition of NbSe₂ thin layers. We observed that the exposure to the air slightly degrades the superconducting transition. Also, we found that the reactive ion etching (RIE) significantly degrades the superconducting transition, presumably due to the formation of defects.