The 78th JSAP Autumn Meeting, 2017

Presentation information

Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology(Poster)

[5p-PA1-1~82] 17 Nanocarbon Technology(Poster)

Tue. Sep 5, 2017 1:30 PM - 3:30 PM PA1 (P)

1:30 PM - 3:30 PM

[5p-PA1-82] Gas adsorption-induced current variation across graphene/MoS2 van der Waals heterojunction depending on bias and gate voltages

Hiroshi Tabata1, Yuta Sato1, Kouhei Oi1, Osamu Kubo1, Mitsuhiro Katayama1 (1.Osaka Univ.)

Keywords:graphene, MoS2, heterojunction

The current across the graphene/MoS2 van der Waals heterojunction is significantly reduced by NO2 gas adsorption, and the current reduction ratio strongly depends on the bias and gate voltages. In this study, on the basis of a MSM model considering two Schottky barriers formed at the interfaces of the graphene/MoS2 and the Ti electrode/MoS2, we analyzed the change in the device characteristics induced by gas adsorption and investigated the mechanism.