4:00 PM - 6:00 PM
[5p-PA3-30] Fabrication and electronic properties of doped tin oxides as electron transporting layers for efficient perovskite solar cells
Keywords:perovskite solar cell
Halogenated lead perovskite materials are the most promising candidates for high efficient next- generation solar cells because their excellent optoelectronic properties including high absorption coefficient, high carrier mobilities. The power conversion efficiency (PCE) of perovskite solar cells has increased to over 20% in the past few years. In the process of manufacturing perovskite solar cells,the electron transport layers prepared by low-temperature process are essential for large-scale production of perovskite solar cells. In general perovskite solar cells, titanium oxide is widely used as the electron transport layer(both compact layer and mesoporous layer).However, high temperature treatment is necessary for the fabrication of TiO2 . On the other hand, SnO2 can be fabricated at lower temperature than TiO2. In addition, SnO2 has a wide band gap, high electric mobility and is considered to be a promising electron transport layer. Perovskite solar cells using SnO2 as electron transport layer have been reported, their power However, the conversion efficiency is lower than those using TiO2. Doping the SnO2 layer is expected to further improve solar cell characteristics.In this study, we have fabricated perovskite solar cells using several types of metal oxide nanoparticles as hole blocking layer and using doped SnO2 as an electron transporting layer and and investigated the effect of metal oxide layer on their charge transport properties and solar cell performances systematically. Detailed experiment results will be presented.