[5p-PA3-1~46] 12.5 Organic solar cells

[5p-PA3-6] Estimation of charge injection barrier at Metal/P3HT interface based on the accumulated charge measurement

〇Hisaki Nakatani¹, Naoto Yasukawa¹, Tomofumi Kadoya¹, Junichi Yamada¹, Seiichi Sato¹, Hiroyuki Tajima¹ (1.Univ. of Hyogo Mater. Sci.)

Keywords:organic semiconductor device, charge injection barrier

By using the accumulated charge measurement method (ACM) using sample with electrode/insulator/organic semiconductor/electrode structure recently reported by us, the charge injection barrier of P3HT and metal (Ag,Cu) under various annealing conditions was determined.
The amount of injected charge and the voltage applied to the P3HT layer were plotted.
Then, the injection interface of P3HT(pristine)/Ag was a schottky junction, but the injection interface of P3HT(N₂ anneal 10min)/Ag was ohmic junction and the result was different.
We considered that the bandwidth widened due to the extension of effective conjugation length of polymer by annealing.