[5p-PB1-1~13] 3.13 Semiconductor optical devices

[5p-PB1-2] MOVPE growth of lattice matched Type-II InAs/GaAsSb superlattices on InAs substrate for mid-infrared sensing devices

〇Kakeru Takahashi¹, Yuki Fujiwara¹, Yuya Yamagata¹, Keita Yoshimoto¹, Yuki Inoue¹, Ryosuke Wakaki¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:superlattice, optical sensing, MOVPE

We fabricated 30 layers of InAs/GaAsSb superlattices on InAs substrate by Metalorganic vapor phase epitaxy (MOVPE) and considered lattice match and evaluated optical property.From the fitting by X-ray diffraction (XRD), the condition of lattice matching was found by changing AsH ₃ flow rate during growth of GaAsSb layer.Moreover,clear luminescence at 4 μm could be confirmed by potoluminescence (PL) evaluation.