[5p-PB1-1~13] 3.13 Semiconductor optical devices

[5p-PB1-4] Evaluation of crystallinity and crystal orientation of c-Se photoconversion layer depending on the deposition condition of Te nucleation layer

〇Shigeyuki Imura¹, Keitada Mineo¹, Kazunori Miyakawa¹, Masakazu Namba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

Keywords:crystalline selenium (c-Se), photoconversion layer, dark current

We invastigate the high sensitivity CMOS image sensors overlaid with a photoconversion layer. Previously, we applied crystalline selenium (c-Se), which has excellent absorption characteristics in visible region, to the CMOS circuits as a photoconversion layer, and obtained a clear image. In this study, we report that crystallinity and crystal orientation of c-Se has improved successfully by controlling the deposition condition of tellurium nucleation layer.