[5p-PB3-1~26] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [5p-PB3-2] Effect of ultra-thin SiO_x insertion on a-Si:H (i) passivation layer deposited by facing target sputtering

〇Akira Faris¹, Yuta Shiratori¹, Kazuyoshi Nakada¹, Shinsuke Miyajima¹ (1.School of Engineering, Tokyo Tech.)

Keywords:crystalline silicon solar cell, passivation layer, amorphous silicon

In this study, we introduced hydrogen peroxide treatment on the silicon wafer and analyzed the effect with our a-Si:H (i) passivation layer deposited by facing target sputtering (FTS) method. In most cases, passivation layers with the SiO_x layer showed higher lifetime, indicating that hydrogen peroxide treatment improves the passivation effect of thin a-Si:H (i) layers deposited by FTS method.