[5p-PB3-1~26] 16.3 シリコン系太陽電池

▲ [5p-PB3-2] Effect of ultra-thin SiO_x insertion on a-Si:H (i) passivation layer deposited by facing target sputtering

〇Akira Faris¹、Yuta Shiratori¹、Kazuyoshi Nakada¹、Shinsuke Miyajima¹ (1.School of Engineering, Tokyo Tech.)

キーワード：crystalline silicon solar cell, passivation layer, amorphous silicon

In this study, we introduced hydrogen peroxide treatment on the silicon wafer and analyzed the effect with our a-Si:H (i) passivation layer deposited by facing target sputtering (FTS) method. In most cases, passivation layers with the SiO_x layer showed higher lifetime, indicating that hydrogen peroxide treatment improves the passivation effect of thin a-Si:H (i) layers deposited by FTS method.