[5p-PB8-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[5p-PB8-1] Surface recombination velocity for the a-face of 4H-SiC

〇Masashi Kato¹, Kimihiro Kohama¹, Zhang Xinchi¹, Masaya Ichimura¹, Tsunenobu Kimoto² (1.NITech, 2.Kyoto Univ.)

Keywords:surface recombination velocity, a-face, carrier lifetime

So far, we have evaluated the surface recombination velocity S for the Si- and C-face of 4H-SiC. However, depending on the device structure, crystal faces other than the Si- adn C- face may be exposed as the surface, and in order to optimally design the device, it is necessary to know S of the crystal faces. Therefore, in this study, we have evaluated S for the a-face of 4H - SiC, and we obtained its values from room temperature to 250°C.