[5p-S22-3~4] 8.8 Plasma Electronics English Session

▲ [5p-S22-3] Evaluation of Nickel Self-Sputtering Yields by Molecular Dynamics Simulation

〇Nicolas Aini Mauchamp¹、Michiro Isobe¹、Satoshi Hamaguchi¹ (1.Osaka University)

キーワード：MD Simulation, Plasma etching

Typically, ion milling is used to manufacture magnetic tunel junction (MTJ) cells for magnetic random access memories. However, for further miniaturisation of MTJ cells, less damaging and more selective etching process are needed. In this study, nickel (Ni) is taken as a sample material and its self-sputtering is evaluated over a wide range of incident energy and incident angle using Molecular Dynamics simulations. The goal of the study is to clarify how the sputtering yield depends on the inter-atomic potential used.