2017年第78回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

8 プラズマエレクトロニクス » 8.8 Plasma Electronics English Session

[5p-S22-3~4] 8.8 Plasma Electronics English Session

2017年9月5日(火) 14:30 〜 15:00 S22 (パレスB)

酒井 道(滋賀県立大)

14:30 〜 14:45

[5p-S22-3] Evaluation of Nickel Self-Sputtering Yields by Molecular Dynamics Simulation

Nicolas Aini Mauchamp1、Michiro Isobe1、Satoshi Hamaguchi1 (1.Osaka University)

キーワード:MD Simulation, Plasma etching

Typically, ion milling is used to manufacture magnetic tunel junction (MTJ) cells for magnetic random access memories. However, for further miniaturisation of MTJ cells, less damaging and more selective etching process are needed. In this study, nickel (Ni) is taken as a sample material and its self-sputtering is evaluated over a wide range of incident energy and incident angle using Molecular Dynamics simulations. The goal of the study is to clarify how the sputtering yield depends on the inter-atomic potential used.