The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[6a-A202-1~10] 6.3 Oxide electronics

Wed. Sep 6, 2017 9:00 AM - 11:45 AM A202 (202)

Makoto Minohara(KEK)

11:00 AM - 11:15 AM

[6a-A202-8] Local Topotactic Reduction of SrFeO3 using Atomic Force Microscope

Shunya Tanaka1, Dai Kutsuzawa1, Yasuhsi Hirose1, Tetsuya Hasegawa1 (1.Univ. of Tokyo)

Keywords:Nanolithography, Atomic force microscope, SrFeO3-x

Scanning probe lithography (SPL) has been intensively studied as a tool for nanofabrication. Among SPL techniques, local electrochemical redox reaction, which proceeds in water meniscus forming between the sample and the probe of an atomic force microscope (AFM), is widely used for surface nanofabrication of various materials. Recently, this technique was also applied to nanoscale modulation of electrical property of transition metal oxides through topotactic redox reaction (i.e. reaction without change of crystalline framework). However, in the previous studies, local changes of chemical composition and crystal structure of the samples have not been evaluated. In this study, we focused on topotactic redox reaction of SrFeO3-x, because the crystal structure and electric property of SrFeO3-x depends on the amount of oxygen vacancies x: SrFeO3 (x=0) is a metal with cubic perovskite structure, while SrFeO2.5 (x=0.5) is an insulator with orthorhombic brownmillerite structure. We performed electrochemical reduction of SrFeO3 thin films by AFM lithography and evaluated local changes in chemical composition, crystal structure and electrical transport properties after the reaction.