The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.7 Nanostructures, quantum phenomena, and nano quantum devices

[6a-A404-1~11] 13.7 Nanostructures, quantum phenomena, and nano quantum devices

3.11と13.7のコードシェアセッションあり

Wed. Sep 6, 2017 9:00 AM - 12:00 PM A404 (404)

Toshiyuki Ihara(NICT)

9:30 AM - 9:45 AM

[6a-A404-3] Spin relaxation of GaSb/AlSb multiple quantum wells

Yuichi Nakamura1, Lianhe Li2, Kizuku Yamada1, Takuya kamezaki1, Edmund Linfield2, Atsushi Tackeuchi1 (1.Waseda Univ., 2.Univ of Leeds)

Keywords:spin relaxation, GaSb/AlSb multiple quantum wells, pump and probe measurements

In this research, we investigated the picosecond spin relaxation in GaSb/AlSb multiple quantum wells observed by time-resolved pump and probe reflection measurements. As a result, the spin relaxation time was 38 ps at 10 K, and negative temperature dependence of the spin relaxation time was observed between 10 and 200 K. Because there is the least report of the spin relaxation in multiple quantum wells (MQWs) containing Sb, I think this research has the significant meaning that can contribute to elucidation of the spin relaxation mechanism.