The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

9 Applied Materials Science » 9.1 Dielectrics, ferroelectrics

[6a-A502-1~14] 9.1 Dielectrics, ferroelectrics

Wed. Sep 6, 2017 9:00 AM - 12:45 PM A502 (502)

Hajime Nagata(Tokyo Univ. of Sci.), Satoshi Wada(Univ. of Yamanashi), Ueno Shintaro(Yamanashi University)

10:30 AM - 10:45 AM

[6a-A502-7] Observation of Domain-Wall Motion in Organic Ferroelectric Thin Films Using Ferroelectric Field-Modulation Imaging Technique

〇(M2)Yohei Uemura1, Shunto Arai1, Junya Tsutsumi2, Satoshi Matsuoka2, Hiroyuki Yamada2, Sachio Horiuchi2, Tatsuo Hasegawa1,2 (1.U. Tokyo, 2.AIST)

Keywords:organic ferroelectrics, observation of ferroelectric domain motion, domain observation technique of ferroelectrics

Recently, proton-transfer type organic ferroelectrics which have small coercive electric field have been reported and are expected to be key materials for low voltage driving devices. For the development of devices, observation of polarization domain motion in single crystal thin films is inevitable.
So far, we have developed an optical technique “Ferroelectrics field modulation imaging (FFMI)” in order to visualize the polarization domain structure, which detects the change of optical spectrum induced by modulation electric field by using an area imaging sensor.
This time, we combined temperature controlled stage with FFMI, and observed the motion of polarization domains at different temperature. In the result, we directly observed that the higher the temperature, the faster the motion of polarization domains. On the day, we also discuss the reason that coercive electric field in thin films become larger than that in bulk crystals.