2017年第78回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

15 結晶工学 » 15.7 結晶評価,不純物・結晶欠陥

[6a-A503-1~13] 15.7 結晶評価,不純物・結晶欠陥

2017年9月6日(水) 09:00 〜 12:30 A503 (503)

永井 勇太(グローバルウェーハズ・ジャパン)、竹内 正太郎(阪大)

11:30 〜 11:45

[6a-A503-10] 3D global heat transfer model on floating zone (FZ) for silicon crystal growth

〇(PC)Xuefeng Han1、Satoshi Nakano1、Xin Liu1、Koichi Kakimoto1 (1.Kyushu Univ.)

キーワード:floating zone, simulation, heat transfer

Floating zone method is one of the best methods to grow single crystal silicon with high purity. The quality of single crystal silicon strongly depends on the temperature distribution during the growth process. In previous studies, 2D axis-symmetrical global models have been developed to investigate the heat transfer in floating zone silicon. However, to increase the homogeneity of dopant distribution, the feed rod is not co-axial with crystal. Additionally, the induction heater is not axis-symmetrical. Therefore, in present study, a 3D global heat transfer model has been developed, which is coupled with 3D EM model. Through the quasi-steady calculation in 3D model, heat transfer, melt flow and gas flow in have been obtained.