[6a-C14-1~14] 3.13 Semiconductor optical devices

[6a-C14-4] Preparation and properties of PbS-based short-cavity mid-infrared lasers on Si

〇Akihiro Ishida¹, Shintaro Hashiguchi¹, Toshiki Yamagishi¹, Hiroki Akikawa¹, Yui Aofuji¹, Seisuke Nakashima¹ (1.Shizuoka Univ.)

Keywords:mid-infrared laser, IV-VI semiconductor, heteroepitaxial growth

PbS-based IV-VI semiconductors have a lowl nonradiative Auger recombination probability and they are useful for mid-infrared laser applications in 2.5-4μm region. Strong absorption bands of various gases exist in the mid-infrared region, owing to the fundamental vibration modes of molecules, and single-mode tunable mid-infrared lasers have applications to the trace-gas analysis. We prepared PbS-based short-cavity lasers , which have potential applications to tunable lasers with low-threshold CW operation. Preparation and properties of the lasers will be presented.