10:15 〜 10:30
▲ [6a-C14-6] Efficiency improvement of green light-emitting diodes by employing all-quaternay active region and electron-blocking layer
キーワード：Semiconductor
High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of 510 nm. By introducing quanternay quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL), an efficiency droop reduction of upto 29% has been achieved in comparison to the conventional GaN-based LED