[6a-C18-1~12] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [6a-C18-8] Gate dependence of the ISHE-induced electromotive force in a thin platinum film

〇Masaya Hokazono¹、Sergey Dushenko¹、Kohji Nakamura²、Yuichiro Ando¹、Teruya Shinjo¹、Masashi Shiraishi¹ (1.Kyoto Univ.、2.Mie Univ.)

キーワード：inverse spin Hall effect, spin pumping

Amongst the broad range of systems and materials in which inverse spin Hall effect (ISHE) was studied, platinum (Pt) attracts special attention due to the presence of the large spin-orbit interaction. In this study, we report tuning of the ISHE in Pt by an applied electric gate. The spin pumping drove pure spin current into the adjacent Pt layer. After the spin-charge conversion due to the ISHE, the generated charge current was detected at the ends of the Pt film. Under the application of gate voltage using the ionic gel (DEME-TFSI), we observe strong modulation of both sample resistance and the electromotive generated due to the ISHE. Experimental results are compared to the theoretical band calculations. The influence of the applied gate voltage on the ISHE in Pt is discussed in detail.