[6a-C24-1~9] 6.6 Probe Microscopy

△ [6a-C24-9] Nanoscale investigation of the power semiconductor device by the AFM/KFM/SCFM

〇Mizuki Nakajima¹, Uchida Yuuki¹, Satoh Nobuo¹, Yamamoto Hidekazu¹ (1.Chiba Inst. of Tech.)

Keywords:Scanning Capacitance Force Microscope, power semiconductor device, SiC-power MOSFET

The power semiconductor devices are progressing toward high-withstand voltage using wide bandgap semiconductor materials, and multi-parallel integration by microfabrication technique. We succeeded in nanoscale observation of the power semiconductor device by the scanning probe microscope based on combined with AFM/KFM/SCFM that achieved high spatial-resolution and high sensitivity.