2017年第78回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.10 化合物太陽電池

[6a-S21-1~9] 13.10 化合物太陽電池

2017年9月6日(水) 09:30 〜 11:45 S21 (パレスA)

石塚 尚吾(産総研)

11:15 〜 11:30

[6a-S21-8] Micro-photoluminescence study of the polycrystalline CuGaSe2 thin-films evaporated by three-stage process

Muhammad Monirul Islam1、Shenghao Wang1、Shogo Ishizuka2、Hajime Shibata2、Shigeru Niki2、Katsuhiro Akimoto1、Takeaki Sakurai1 (1.Tsukuba Univ.、2.AIST)

キーワード:chalcogenide solar cells, thin films, deep level

Micro photoluminescence (µ-PL) was performed to investigate radiative and non-radiative transitions in the wide-gap CuGaSe2 material.Polycrystalline CuGaSe2 thin-films with 2 μm of thickness were grown over Mo-coated soda lime glass (SLG) substrates through three-stage co-evaporation process. µ-PL was performed with a confocal laser scanning microscope using a 635 nm line of a diode laser. A peak found around 1.5 eV is in consistent with results of other researchers, and considered as a donor-acceptor pair transition (DAP1). An emission at low energy side with asymmetric and broadened peak around 1.3 eV was observed and assigned as DAP2 based on its power dependence. In addition, a new broadened emission around 0.9~1.1 eV was found and assigned as a deep donor-acceptor emission, DDA. Considering the same acceptor level as for DAP2, donor level involved with this emission is located around 600 meV below EC which may be tailored down to 800 meV.