The 78th JSAP Autumn Meeting, 2017

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Oral presentation

CS Code-sharing session » 【CS.9】7.1 & 7.4 Code-sharing session

[6a-S41-1~11] 【CS.9】7.1 & 7.4 Code-sharing session

Wed. Sep 6, 2017 9:00 AM - 12:15 PM S41 (Conf. Room 1)

Tetsuroh Shirasawa(AIST), Shushi Suzuki(Nagoya University), Hiroki Wadati(The University of Tokyo)

9:00 AM - 9:15 AM

[6a-S41-1] Crystal Structure and Hysteresis Characteristics of Bi4-xLaxTi3O12 Ferroelectric thin films formed on Si(100) substrates

〇Atsushi Kohno1, Takayuki Tajiri1 (1.Fukuoka Univ.)

Keywords:bismuth-layer-structured ferroelectric thin film, crystal structure, hysteresis characteristics

It was confirmed that Bi4-xLaxTi3O12 (BLT) thin films (thickness: 18 ~ 71 nm) formed on Si(100) substrates with chemical solution deposition method had high preferential crystal orientation, and that the thinner films have higher orientation. It was also found that lattice distortion occurred in the BLT crystal of the thin films. The Au/BLT(~18nm)/p-Si(100) capacitor structure showed hysteresis, which is caused by ferroelectricity of BLT, in capacitance-voltage characteristics. In this presentation we will discuss about crystal orientation of BLT on Si(100), lattice distortion, interface layer, and their effect on the hysteresis characteristics.