[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-14] Influence of additives for surface smoothness and polytype stability in solution growth of n-type 4H-SiC

〇(PC)Naoyoshi Komatsu¹, Takeshi Mitani¹, Yuichiro Hayashi¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST)

Keywords:SiC, solution growth, surface

In solution growth of n-type 4H-SiC, it is important to find additives which increase surface smoothness and do not influence the resistivity of the grown crystals. In this study, we further investigated changes in macrostep height, polytype stability, and carrier concentration of the crystals grown with various additives to Si_0.6Cr_0.4 solvents, especially focusing on additives of transition metals.