[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-8] SiC solution growth controlled meniscus height by in-situ X-ray observation method

〇Takenobu Sakai¹, Mithtoshi Akita², Motohisa Kado², Hironori Daikoku², Shunta Harada³, Toru Ujihara³ (1.Nagoya Univ. IIFS, 2.Toyota Motor Cor., 3.Nagoya Univ. IMaSS)

Keywords:power semiconductor, in-situ observation

In the SiC solution growth technique, the meniscus height was controlled to three values by the developed in-situ X-ray observation system, and the influence on crystal growth and the range of good product conditions were examined. As a result, it was proved that maintaining the meniscus at about 2 mm is effective for maintaining polytype.