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▼ [6p-A203-7] Single-crystal MAPbBr3 based flexible light-emitting diodes prepared by cast-capping method
キーワード：Perovskite, Cast-capping method, LED
Low cost and flexible devices are demands of next optoelectronic generation devices. Recently, perovskites have become promising materials due to their attractive properties for solar cells and light emitting devices with tunable emission wavelengths, long carries life time and low-temperature processing. Here we present “single-crystal” MAPbBr3 based flexible light-emitting diodes prepared by cast-capping method. This method includes two simple processes: casting a precursor perovskites solution on a substrate and capping with another substrate. Then, large-sized single cubic crystals were formed between the substrates.
We first fabricated a very simple flexible LED: ITO/MAPbBr3/ITO where ITO coated-PET substrates were used to make flexible electrodes. After dryness for few days, single-crystal MAPbBr3 with few-μm thickness was grown between the ITO-PET electrodes. Secondary, LEDs with PET/ITO/ZnO/MAPbBr3/MoO3/ITO/PET structure was built. ZnO and MoO3 films were used as electron and hole transport layers, respectively. The ZnO thin film was prepared by the sol-gel method with zinc acetate dissolved in methanol to give 1.5 mg/mL concentration. The ZnO solution was spin-coated on the ITO/PET substrate and annealed at 100oC for 12 hours. The MoO3 film (~10 nm thick) was vapor-deposition on another ITO/PET substrate.
We first fabricated a very simple flexible LED: ITO/MAPbBr3/ITO where ITO coated-PET substrates were used to make flexible electrodes. After dryness for few days, single-crystal MAPbBr3 with few-μm thickness was grown between the ITO-PET electrodes. Secondary, LEDs with PET/ITO/ZnO/MAPbBr3/MoO3/ITO/PET structure was built. ZnO and MoO3 films were used as electron and hole transport layers, respectively. The ZnO thin film was prepared by the sol-gel method with zinc acetate dissolved in methanol to give 1.5 mg/mL concentration. The ZnO solution was spin-coated on the ITO/PET substrate and annealed at 100oC for 12 hours. The MoO3 film (~10 nm thick) was vapor-deposition on another ITO/PET substrate.