[6p-A405-1~22] 【CS.4】3.11 & 13.7 Code-sharing session

[6p-A405-3] Dynamic property of single InAs/InP nanowire light-emitting diodes

〇Masato Takiguchi^1,2, Guoqiang Zhang^1,2, Satoshi Sasaki², Kengo Nozaki^1,2, Edward Chen², Takehiko Tawara^1,2, Hideki Gotoh², Masaya Notomi^1,2 (1.NTT NPC, 2.NTT BRL)

Keywords:nanowire, light emitting diode, direct modulation

The versatility of nanowires allow for the implementation of various functional structures, including the realization of new nanowire light sources on photonic chips. Past reports have explored behaviors in telecom-band nanowire lasers [1] and Schottky type current injection nanowires within the visible spectrum [2], but none have demonstrated nanowire current injection in the telecom-band spectrum. In this study, we will explore current injection in telecom-band single nanowire light-emitting diodes (LEDs) and will demonstrate the dynamic properties for future on-chip light source applications.
[1] M. Takiguchi, et.al., APL Photonics, 2, 046106 (2017)
[2] X. Duan, et.al., Nature 421, 241, (2003)