[6p-A410-1~12] 4.4 Opto-electronics

▲ [6p-A410-12] Effects of Interface defect on the performance of ZnO/p-Si heterojunction solar cell

〇(DC)SYED SADIQUE ANWER ASKARI¹、MANOJ KUMAR¹、MUKUL KUMAR DAS¹ (1.IIT (ISM) DHANBAD, INDIA)

キーワード：ZnO/p-Si heterojunction solar cell, interface recombation velocity

P-type silicon heterojunction solar cells with ZnO as emitter were studied by SILVACO TCAD in this paper. We have investigated the influence of interface recombination velocity on the performance of ZnO/p-Si heterojunction solar cell. It observed that the open circuit voltage (Voc), and the efficiency decreases with an increase in the interface recombination velocity. Simulation anticipated V_OC and the efficiency, remains approximately constant up to 1.0×10³ cm/sec surface recombination velocity. but for the higher interface recombination velocity, the open circuit voltage decreases from 600mV to 260mV and the efficiency decreases from ~17% to ~5%.