The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

4 JSAP-OSA Joint Symposia 2017 » 4.4 Opto-electronics

[6p-A410-1~12] 4.4 Opto-electronics

Wed. Sep 6, 2017 1:15 PM - 6:15 PM A410 (410)

Kazuhiko Shimomura(Sophia Univ.), Kazutoshi Kato(Kyushu University)

3:15 PM - 3:30 PM

[6p-A410-4] Room temperature lasing operation of 1.5 um GaInAsP LD on InP/Si substrate

〇(D)Gandhi Kallarasan1, Naoki Kamada1, Yuya Onuki1, Kazuki Uchida1, Hirokazu Sugiyama1, Xu Han1, Natsuki Hayasaka1, Masakai Aikawa1, Kazuhiko Shimomura1 (1.Sophia Univ.)

Keywords:semiconductor lasers, silicon photonics, MOVPE

The monolithic integration of optical III-V Laser Diode (LD) especially InP based LD is a predominant factor in the actualization of light sources on the silicon platform. We have proposed the monolithic integration of III-V LD epitaxial layers on the wafer-bonded InP/Si substrate via MOVPE. Our unique approach is that we do the adhesion of thin film InP and Si substrate before the MOVPE growth. We have already shown the successful demonstration of GaInAsP LD on InP/Si substrate. In this paper, we report the room temperature lasing operation of 1.5µm GaInAsP LD on InP/Si substrate resulting in the lowest threshold current density at the room temperature.