[6p-A412-1~15] 6.2 Carbon-based thin films

[6p-A412-7] [JSAP Young Scientist Award Speech] Operation Analysis of Vertical-type 2DHG Diamond MOSFETs and Improvement of Breakdown Characteristics

〇Nobutaka Oi¹, Takuya Kudo¹, Tsubasa Muta¹, Satoshi Okubo¹, Ikuto Tsuyuzaki¹, Taisuke Kageura¹, Masafumi Inaba^1,2, Shinobu Onoda³, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,4 (1.Waseda Univ., 2.Nagoya Univ., 3.Qst, 4.Zaiken)

Keywords:diamond, MOSFET, semiconductor

We fabricated vertical-type 2DHG diamond MOSFETs and analyze operation characteristics. Device characteristics of vertical-type MOSFETs were compared with that of lateral-type device. We analyze the characteristics by simulation.