[6p-A412-1~15] 6.2 カーボン系薄膜

[6p-A412-8] Carrier lifetime in diamond p-i-n diode by Open Circuit Voltage Decay method (OCVD)

〇(P)Aboulaye Traore¹、Akira Nakajima¹、Toshiharu Makino¹、Daisuke Kuwabara^1,2、Hiromitsu Kato¹、Masahiko Ogura¹、Daisuke Takeuchi¹、Satoshi Yamasaki^1,2 (1.AIST、2.Univ. of Tsukuba)

キーワード：Diamond, pi-n diode, Carrier lifetime

Owing to its outstanding electrical and thermal properties, diamond is on the best semiconductors for high-power applications. Over the last few decades, considerable progress has been made in the fabrication of high voltage diamond devices as reflected by the p-i-n diodes. Indeed, besides their breakdown field about 3 MV/cm (the SiC limit) and their very fast switching behavior, the series resistance of diamond p-i-n diodes can be reduced because of hopping conduction. Besides the reduction of their series resistance, the base conductivity modulation of diamond p-i-n diode and its effectiveness are the main concerns. Nowadays, the electrical transport in diamond p-i-n diode is still unknown and also the key parameter of conductivity modulation, namely, the carrier lifetime and carrier recombination mechanisms.

In this work, the effective carrier lifetime within a diamond p-i-n diode has been investigated using an electrical method: the Open Circuit Voltage Decay (OCVD). The OCVD allows assessing to the effective carrier lifetime within the active layer of the p-i-n diode. The carrier recombination within the diamond p-i-n diode has been investigated. An accurate estimation of the effective carrier has been done. The effects of conduction current level (injected carrier density) and temperature on the effective carrier lifetime have been investigated. Carrier recombination mechanisms are introduced to explain experimental data.