[6p-A501-1~21] 12.5 Organic solar cells

△ [6p-A501-14] High hole mobility in PbS Colloidal Quantum Dot Assemblies

〇(D)Liming Liu^1,2, Satria Bisri¹, Yasuhiro Ishida¹, Yoshihiro Iwasa^1,2, Takuzo Aida^1,2 (1.Riken-CEMS, 2.Tokyo Univ.)

Keywords:quantum dots, high hole mobility, P-type

Quantum dot (QD) doping is very important for many applications such as solar cells, light emitting diode (LED), thermoelectrics and so on. While n-type QD films have been successfully obtained by capping with ligands such as hydrazine and halide ions (I^-, Br^-, Cl^-), p-type QD films have so far mostly been obtained via oxidation in ambient conditions, which is hard to control. Here we demonstrate a new ligand 2,5-thiophene dicarboxylic acid, which gives lead sulfide (PbS) QDs a p-type behavior with the highest hole mobility of 0.02 cm²V^-1s^-1 (in SiO₂-gated field effect transistors) reported for PbS QDs which may be useful for constructing high-performance QD-based devices including photovoltaic ones.