The 78th JSAP Autumn Meeting, 2017

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.7 Crystal evaluation, impurities and crystal defects

[6p-A503-1~12] 15.7 Crystal evaluation, impurities and crystal defects

Wed. Sep 6, 2017 1:45 PM - 5:00 PM A503 (503)

Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Satoko Nakagawa(GWJ)

4:30 PM - 4:45 PM

[6p-A503-11] Oxygen Diffusivity Analyzed Based on Thermal Donor Formation in Silicon Crystals

〇Kazuhisa Torigoe1, Shigeru Umeno1, Toshiaki Ono1 (1.SUMCO)

Keywords:silicon, diffusion, thermal donor

It is well known that thermal donors (TDs) is formed in silicon crystals during annealing at 400-500oC. TDs are recognized as oxygen clusters whose formation is limited by oxygen diffusion. In this work, the diffusivity of fast-diffusing oxygen species are obtained analyzing TD formation rate. As a result, it is suggested that fast-diffusing oxygen species comparable to point defects in silicon contribute to oxygen diffusion at temperatures lower than 450oC.