Study on Electro-Absorption Optical Modulator, Using Ge/Si Rib Waveguide

Junichi Fujikata; Masataka Noguchi; Hideki Ono; Shigeki Takahashi; Daisuke Shimura; Hiroyuki Takahashi; Hiroki Yaegashi; Takahiro Nakamura

Presentation information

Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[6p-C13-1~15] 3.15 Silicon photonics

3.13と3.15のコードシェアセッションあり

Wed. Sep 6, 2017 1:45 PM - 6:15 PM C13 (office 2-2)

Yuya Shoji(Titech), Mitsuru Takenaka(Univ. of Tokyo), Tatsuro Hiraki(NTT)

3:00 PM - 3:15 PM

[6p-C13-5] Study on Electro-Absorption Optical Modulator, Using Ge/Si Rib Waveguide

〇Junichi Fujikata¹, Masataka Noguchi¹, Hideki Ono¹, Shigeki Takahashi¹, Daisuke Shimura¹, Hiroyuki Takahashi¹, Hiroki Yaegashi¹, Takahiro Nakamura¹ (1.PETRA)

Keywords:electro-absorption optical modulator, Ge/Si waveguide

We report on the 40 um length of Ge/Si electro-absorption optical modulator, which consists of an epitaxially grown Ge waveduide with p-i-n junction on a Si based rib waveguide with pn junction. We demonstrate high-speed modulation of 25 Gbps with 1Vpp.