[6p-C14-1~19] 3.13 Semiconductor optical devices

[6p-C14-12] Laser on Intermixed Quantum Dot Structure by Ion Implantation and Rapid Thermal Annealing

〇Shine Matsui¹, Yota Akashi¹, Shohei Isawa¹, Atsushi Matsumoto², Koichi Akahane², Yuichi Matsushima³, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT, 3.Waseda Univ. GCS)

Keywords:Quantum dot, Intermixing, Semiconductor laser

Quantum dot intermixing(QDI) using ion implantation is widely studied as an monolithical integration technique for quantum dot(QD). We had confirmed maximum 190 nm shift of photoluminescence peak after our QDI technique. On the other hand, control of oscillation wavelength of laser is an underlying technology for telecommunication or sensing technologies. In this paper, we report the characteristics of wavelength controlled laser on QDI structure(QDI-LD).