[6p-C16-1~17] Latest Application Researches and Future Prospects of Functional Atomic Layers

[6p-C16-14] Molecular beam epitaxy growth and characterization of transition metal dichalcogenides on hexagonal Boron Nitride

〇Takato Hotta¹, Takuto Tokuda¹, Kenji Watanabe², Takashi Taniguchi², Hisanori Shinohara¹, Ryo Kitaura¹ (1.Nagoya Univ., 2.NIMS)

Keywords:atomic layer, transition metal dichalcogenides

Transiotion metal dichalcogenides (TMDC) atomic layer have been attracted a great deal of attention due to novel physical properties and device application. In order to explore these possibilities of TMDC, it is neccesary to establish growth method of large-area and high quality crystal. In this work, we have focused on molecular beam epitaxy growth of monolayer TMDC onto hexagonal boron nitride.