6:15 PM - 6:30 PM
[6p-C16-14] Molecular beam epitaxy growth and characterization of transition metal dichalcogenides on hexagonal Boron Nitride
Keywords:atomic layer, transition metal dichalcogenides
Transiotion metal dichalcogenides (TMDC) atomic layer have been attracted a great deal of attention due to novel physical properties and device application. In order to explore these possibilities of TMDC, it is neccesary to establish growth method of large-area and high quality crystal. In this work, we have focused on molecular beam epitaxy growth of monolayer TMDC onto hexagonal boron nitride.