[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-13] Preparation of CuAlO₂ thin films by reactive co-sputtering of Cu and Al

〇Takashi Ehara¹ (1.Ishinomaki Senshu Univ.)

Keywords:delafossite, reactive sputtering, co-sputtering

CuAlO₂ thin films have been prepared by reactive co-sputtering of Cu and Al. The co-sputtering of Cu and Al was carried out by placing Cu chips on erosion region of Al target surface, and then sputtered by oxygen plasma. This method makes CuAlO₂ thin film deposition process possible without sputtering target surface structural changing by oxygen plasma.