The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 6, 2017 1:45 PM - 5:45 PM C17 (Training Room 2)

Hisao Makino(Kochi Univ. of Tech.)

3:15 PM - 3:30 PM

[6p-C17-7] Improvement of mobility in Ga doped ZnO films by oxygen absorption

Rei Sugiura1, Yuki Asano1, Shuhei Funaki1, Yasuji Yamada1 (1.Shimane Univ.)

Keywords:zinc oxide, anneal, semiconductor