[6p-C23-1~16] 6.4 薄膜新材料

▲ [6p-C23-14] Transport properties of single-crystalline TiSe₂ epitaxial thin films grown by molecular-beam epitaxy

〇Yue Wang¹、Masaki Nakano¹、Yuta Kashiwabara¹、Masaro Yoshida²、Yoshihiro Iwasa^1,2 (1.Univ. of Tokyo、2.RIKEN CEMS)

キーワード：2D materials, Transition-metal dichalcogenide, Molecular-beam epitaxy

Transitional-metal dichalcogenides (TMDC) with reduced thickness are one of the most important branches in 2D materials researches due to their novel properties that are different from their bulk counterparts. 1T-TiSe₂, one of semiconducting TMDC with a negative band gap (i.e. a semimetal), possesses a charge-density wave (CDW) ground state with the transition temperature of about T = 200 K in a bulk, which is competitive to a superconducting phase. Here, we report on epitaxial growth of single-crystalline 1T-TiSe₂ thin films by molecular-beam epitaxy (MBE), and discuss their transport properties.