[6p-PA5-1~24] 13.10 Compound solar cells

[6p-PA5-20] The effect of growth temperature and growth rate on properties of InGaP solar cells grown by MBE

〇(M2)Yuki Nagato^1,2, Takeyoshi Sugaya², Ryuji Oshima², Yoshinobu Okano¹ (1.TCU, 2.AIST)

Keywords:Molecular beam epitaxy, III-V compound semiconductors, solar cells

We studied the effect of the growth condition on the properties of lattice-matched InGaP solar cells, which were grown on GaAs(001) by solid source molecular beam epitaxy. In solar cell measurements, the cell efficiency was improved from 12.75% for the cell grown at 480 °C at a rate of 1.0 mm/h to 14.43% for the cell grown at 510 °C at a rate of 1.5 mm/h. In dark I-V measurements, the reverse saturation current density was effectively reduced as the growth temperature and the growth rate increased, which may be associated with the suppression of recombination current due to generation of defects.