[6p-PA7-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[6p-PA7-10] Effect of LT-AlSb growth on electron transport properties of InSb HEMT structure

〇Yuki Endo¹, Yoshiaki Harada¹, Jun Takeuchi¹, Takuya Iwaki¹, Ryuto Machida¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science)

Keywords:AlSb, MBE, HEMT