[6p-PA7-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[6p-PA7-16] Growth of Ge Thin Film on Si(001) Substrate by Pulse Jet Epitaxy using tBGe

〇Hironori Akita¹, Masahiro Kawano¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹ (1.Univ. Miyazaki)

Keywords:tBGe, Ge on Si