[6p-PA7-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[6p-PA7-8] Fabrication of GaSb/AlGaSb Multi QWs Structure Grown on Si(100) Substrate Using Heteroepitaxial GaSb Thin-film / Dots Nucleation Layers

〇Ryuto Machida¹, Kouichi Akahane², Issei Watanabe², Shinsuke Hara², Sachie Fujikawa¹, Akifumi Kasamatsu², Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

Keywords:GaSb, Si, MBE