The 78th JSAP Autumn Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

Wed. Sep 6, 2017 4:00 PM - 6:00 PM PA8 (P)

4:00 PM - 6:00 PM

[6p-PA8-10] XRD and HAXPES characterization of Al/Ti/AlGaN interface formed by thermal annealing

Satoshi Yasuno1, Tomoyuki Koganezawa1, Takayuki Suzuki2, Naotaka Iwata2 (1.JASRI, 2.Toyota Tech. Inst.)

Keywords:AlGaN, Synchrotron radiation analysis

In this study, we carried out the hard X-ray photoelectron spectroscopy (HAXPES) and X-ray diffraction (XRD) measurements with a two-dimensional (2D) detector to evaluate the chemical states and the crystallinity at the Al/Ti/AlGaN interface layer with anneal treatment. XRD measurement with 2D-detector result showed that the TiN and Ti2AlN with three-dimensional orientation was grown. In addition, HAXPES result indicated that the metal composition of Ga was observed at annealed sample.