[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-10] XRD and HAXPES characterization of Al/Ti/AlGaN interface formed by thermal annealing

〇Satoshi Yasuno¹, Tomoyuki Koganezawa¹, Takayuki Suzuki², Naotaka Iwata² (1.JASRI, 2.Toyota Tech. Inst.)

Keywords:AlGaN, Synchrotron radiation analysis

In this study, we carried out the hard X-ray photoelectron spectroscopy (HAXPES) and X-ray diffraction (XRD) measurements with a two-dimensional (2D) detector to evaluate the chemical states and the crystallinity at the Al/Ti/AlGaN interface layer with anneal treatment. XRD measurement with 2D-detector result showed that the TiN and Ti₂AlN with three-dimensional orientation was grown. In addition, HAXPES result indicated that the metal composition of Ga was observed at annealed sample.