[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-12] Change in properties of GaN Schottky barrier diodes by insertion of ultrathin insulator layers

〇(M2)Taito Hasezaki¹, Masamiti Akazawa¹ (1.RCIQE,Hokkaido Univ.)

Keywords:Semiconductor, Gallium Nitride, schottky

In this presentation, we report that the Schottky barrier height changes by inserting an Al₂O₃ ultra thin film between GaN and a metal layer. There are reports that the Schottky barrier height can be changed by inserting an ultrathin (1 to 3 nm) insulating film at the interface between a metal and a semiconductor such as Ge, Si, GaAs, etc. Also in GaN If the barrier height can be controlled by the same method, the degree of freedom of device design increases. In addition, useful knowledge may be obtained for understanding the formation mechanism of Schottky barrier.