[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-20] Characterization of N-polar Mg-doped p-type GaN by photo-current Deep-Level Transient Spectroscopy

〇(M1)Hideaki Suzuki¹, Katsuya Terashima¹, Shungo Oikawa¹, Ryohei Nonoda², Tomoyuki Tanikawa², Takashi Matsuoka², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tohoku Univ.)

Keywords:GaN, MCTS, Mg doping

We have reported the Mg-doping characteristics of N-polar p-type GaN. In this study, we characterize the minority carrier traps in the crystal by photo-current DLTS (or MCTS). We evaluated the samples with three Mg / Ga ratios. We found strong and broad MCTS peak signal appeared above 200 K with the samples which show saturating or decreasing characteristics in hole concentration against the increasing of Mg / Ga ratio. These results indicate that the minority carrier traps may cause the self-compensation phenomenon when magnesium is highly doped in GaN crystal.