Characterization of Al<sub>2</sub>O<sub>3</sub>/GaN MOS formed by ALD with DMAH

Mutsunori Uenuma; Kiyoshi Takahashi; Sho Sonehara; Takuya Akano; Yuta Fujimoto; Yasuaki Ishikawa; Yukiharu Uraoka

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Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

Wed. Sep 6, 2017 4:00 PM - 6:00 PM PA8 (P)

4:00 PM - 6:00 PM

[6p-PA8-7] Characterization of Al₂O₃/GaN MOS formed by ALD with DMAH

〇Mutsunori Uenuma¹, Kiyoshi Takahashi², Sho Sonehara¹, Takuya Akano¹, Yuta Fujimoto¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Nippon Aluminum Alkyls Ltd.)

Keywords:GaN, DMAH

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Presentation information

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-7] Characterization of Al2O3/GaN MOS formed by ALD with DMAH

[6p-PA8-7] Characterization of Al₂O₃/GaN MOS formed by ALD with DMAH