4:00 PM - 6:00 PM
△ [6p-PA8-8] Characterization of AlxGa1-xN/GaN MOS-HEMTs
Keywords:Gallium Nitride, HEMT
Presentation information
Poster presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology
Wed. Sep 6, 2017 4:00 PM - 6:00 PM PA8 (P)