[6p-PA9-1~26] 13.9 Optical properties and light-emitting devices

[6p-PA9-23] Optical properties of GaAs / InGaAs quantum wells grown on (775)B spherical dimples by MBE

〇(M1)Taishi Sasaki¹, Hashimoto Asuka¹, Shimomura Satoshi¹ (1.Aidai Univ.)

Keywords:GaAs/InGaAs, Emission characteristics

In this study, spherical dimples were formed on (775) B substrate, and InGaAs quantum wells were fabricated on them. Since the position dependence of the light emission characteristics on the dimple is directly dependent on the substrate orientation, it becomes possible to investigate the substrate orientation dependence of the light emission characteristics in detail.