[7a-A405-1~10] 3.12 ナノ領域光科学･近接場光学

▲ [7a-A405-4] Spectral Analysis of High-Power Infrared Silicon Light Emitting Diodes by Dressed Photons : Contribution of Phonons

〇(PC)Borriboon Thubthimthong¹、Tadashi Kawazoe^2,3、Motoichi Ohtsu^1,3,4 (1.The Univ. of Tokyo、2.Tokyo Denki Univ.、3.Nanophoton. Eng. Org、4.Res. Origin for DP)

キーワード：Dressed photons, Silicon light-emitting diodes, Phonons

We studied the phonon-assisted radiative recombination process in the high-power infrared Si light-emitting diodes fabricated using the dressed-photon-phonon-assisted annealing. A photoluminescence study conducted by using an exciting wavelength of 532 nm indicated that one and three optical phonons were responsible for the efficient light emission of the device. The device exhibited a high external quantum efficiency of 14 % and a total output optical power of 200 mW.