[7a-A414-1~8] 13.9 Optical properties and light-emitting devices

[7a-A414-4] Spin relaxation in undoped GaAs grown by VGF method and LEC method

〇Shima Tanigawa¹, Masayuki Iida¹, Daisuke Tanaka¹, Masaya Takizawa¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

Keywords:GaAs, spin relaxation

In this research, we investigated the spin relaxation in undoped GaAs grown by VGF method and LEC method by time-resolved spin-dependent pump and probe reflection mesurements. As a result, the spin relaxation times in undoped GaAs grown by VGF method and LEC method at 10 K were 220 ps and 752 ps, respectively. The spin relaxation times at room temperature were 49 ps and 138 ps, respectively. The spin relaxation time is longer in the GaAs bulk grown by LEC method than in the one grown by VGF method. We believe that the crystallinity is involved.